Real-time measurements of stress relaxation in InGaAs/GaAs

Authors
Beresford, R Yin, J Tetz, K Chason, E
Citation
R. Beresford et al., Real-time measurements of stress relaxation in InGaAs/GaAs, J VAC SCI B, 18(3), 2000, pp. 1431-1434
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1431 - 1434
Database
ISI
SICI code
1071-1023(200005/06)18:3<1431:RMOSRI>2.0.ZU;2-I
Abstract
Real-time observations of the film stress-thickness product are presented f rom the growth of strained InGaAs/GaAs layers. Growth temperatures of 440 a nd 520 degrees C were used with a nominal In composition of x=0.20. The dat a are compared with a model of relaxation kinetics based on dislocation gli de velocity. The residual strain is higher than predicted and the relaxatio n is not markedly temperature dependent, in contrast to the model. These di screpancies suggest that dislocation blocking causes incomplete relaxation in this material system. (C) 2000 American Vacuum Society. [S0734-211X(00)0 1403-7].