Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes

Authors
Hong, M Anselm, KA Kwo, J Ng, HM Baillargeon, JN Kortan, AR Mannaerts, JP Cho, AY Lee, CM Chyi, JI Lay, TS
Citation
M. Hong et al., Properties of Ga2O3(Gd2O3)/GaN metal-insulator-semiconductor diodes, J VAC SCI B, 18(3), 2000, pp. 1453-1456
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1453 - 1456
Database
ISI
SICI code
1071-1023(200005/06)18:3<1453:POGMD>2.0.ZU;2-A
Abstract
Ga2O3(Gd2O3), electron beam evaporated from a single crystal Ga5Gd3O12 garn et, was en: situ deposited on molecular beam epitaxy grown GaN of Ga-polar surface. Using capacitance-voltage measurement, accumulation and depletion behavior was observed in the Ga2O3(Gd2O3)/GaN metal-oxide-semiconductor dio des, with an interfacial density of states less than 10(11) cm(-2) eV(-1) T he Ga2O3(Gd2O3)/GaN interface remains intact with the samples subject to ra pid-thermal annealing up to 950 degrees C, as studied from x-ray reflectivi ty measurements. (C) 2000 American Vacuum Society. [S0734-211X(00)01203-8].