High performance 1.3 mu m InGaAsN : Sb/GaAs quantum well lasers grown by molecular beam epitaxy

1.3 mu m InGaAsN:Sb/GaAs quantum well laser diodes (LDs) have been grown by solid source molecular beam epitaxy using Sb as a surfactant. A record low threshold of 1.02 kA/cm(2) was achieved for broad area laser diodes under pulsed operation at room temperature. Performance of single quantum well (S QW) and multiple quantum well (MQW) InGaAsN:Sb LDs are compared. While the room temperature threshold and slope efficiency of MQW LDs remain almost th e same as those of SQW LDs, the high temperature characteristics of MQW LDs are greatly improved. A record high operating temperature of 105 degrees C and a high characteristic temperature (T-0) of 92 K below 75 degrees C are achieved for the InGaAsN:Sb/GaAs MQW LD. (C) 2000 American Vacuum Society. [S0734-211X(00)05003-4].