Growth and characterization of patterned ZnCdSe structures for applicationin integrated R-G-B II-VI light-emitting diodes

We report the growth and characterization of patterned ZnCdSe structures on GaAs substrates as our initial attempt to use shadow mask selective area m olecular-beam epitaxy (MBE) to integrate II-VI (Zn,Cd,Mg)Se-based red-green -blue (R-G-B) light-emitting diodes (LEDs). Patterned ZnCdSe thick layers a nd ZnCdSe/ZnSe quantum wells (QWs) were grown on GaAs substrates using a si licon shadow mask mounted on a mask fixture that allows the mask to be plac ed and removed within the MBE growth system. Excellent pattern definition a nd good optical properties were obtained. Integration of patterned ZnCdSe/Z nSe QWs having different thickness and Cd composition, therefore different emission wavelengths, on a single GaAs substrate was also achieved. These r esults will be applied to the (Zn,Cd,Mg)Se material system to integrate R-G -B LEDs on a single InP substrate. (C) 2000 American Vacuum Society.