(Zn,Mg,Cd)Se quaternary alloys lattice matched to InP, a novel material for
the fabrication of light emitting devices with light emission spanning the
visible range, are difficult to dope p-type while their n-type doping is r
elatively easy. To address this issue, the p-type doping of the Zn1-xMgxSe
and Zn1-yCdySe ternaries was investigated as a function of composition usin
g a radio frequency discharge nitrogen plasma source. Besides conventional
(uniform) doping, a type of delta doping that involves codoping with N and
Te [(N + Te)delta doping] was performed. The p-type: doping level was incre
ased by the (N + Te)delta doping, however, the net acceptor concentration (
N-A-N-D) of both ternaries decreased with the addition of either Mg or Cd,
indicating that both Mg and Cd atoms hinder the p-type doping of the alloys
. To overcome these doping difficulties, we propose the growth of a Zn1 - x
' - y'Mgx'Cdy'Se/ZnSe:N superlattice structure, in which the p-type doping
is selectively performed only in the ZnSe region, as a substitute for the q
uaternary alloy. (C) 2000 American Vacuum Society.