In0.18Ga0.82As/GaAs1-yPy quantum wells grown on (n11)A GaAs substrates by molecular beam epitaxy

We have investigated the influence of V(As-4+P-2)/III(Ga) pressure ratio on interface flatness of In(0.18)Ga(0.82)AslGaAs(1-y)P(y) (2.9 nln/20 nm) sin gle quantum wells (SQWs) (y=0.18-0.32) grown on (100)- and (n11)A-oriented GaAs substrates (n=3, 4, and 5) by molecular beam epitaxy. With decreasing V(As-4+P-2)/III(Ga) pressure ratio from 8 to 4, full width at half maximum (FWHM) of 11 K photoluminescence (PL) peak of the (411)A SQW was dramatical ly reduced to 7.8 meV, while those of the (311)A and (100) SQWs increased f rom their best FWHM (7.3 and 6.8 meV). This is different from those in the other SQWs. The best values of FWHM of the (311)A and (411)A SQWs were as s mall as those of the (100) In(0.18)G(0.82)As/GaAs1-yPy and In0.17Ca0.83As/A l0.3Ga0.7As QWs. The highest PL intensity was observed for the (411)A SQW g rown under V(As-4+P-2)/III(Ga) = 4, The (311)A SQWs grown under V(As-4+P-3) /III(Ga) = 4 to 8 have 60%-70% smaller PL intensity than the (411)A SQW, bu t they have much higher PL intensity than the (100) and (511)A SQWs. This i mplies that the (311)A and (411)A In0.18Ga0.82As/GaAs1-yPy QWs have a good optical quality. (C) 2000 American Vacuum Society.