In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy

We have investigated lateral uniformity of pseudomorphic In0.05Ga0.95As/Al0 .3Ga0.7As quantum wells (QWs) with well widths L-w of 2.4 and 3.6 nm grown on a (411)A InxGa1-xAs ternary substrate by molecular beam epitaxy. The lat eral variation of In content (x) is from 0.054 to 0.063 over an area of 4 m m(2) in this substrate. In spite of the lateral variation of x in the (411) A InGaAs substrate (x = 0.054-0.063), full widths at half maximum (FWHMs) o f the photoluminescence peaks (12 K) from the (411)A QWs are almost indepen dent of the excitation position (FWHM = 9.0-9.7 meV for L-w = 2.4nm and 6.9 -7.3 meV for L-w = 3.6 nm). Moreover they are approximately 20% smaller tha n those (FWHM = 11.0-11.3 meV for L-w = 2.4 nm and 8.6-9.0 meV for L-w = 3. 6nm) of the corresponding QWs grown on a (100) In(0.06)Ga(0.94)Ad ternary s ubstrate (C) 2000 American vacuum Society.