Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr4

Carbon-doped GaAs and InP grown at low temperatures by molecular-beam epita xy contain a high concentration of antisite defects which gives rise to ult rafast carrier trapping time and desirable radiation-hard properties. The u se of CBr4 as the dopant source introduced significant bromine incorporatio n during low-temperature (LT) growth. Incomplete dissociation of the CBr4 m olecules gives rise to the formation of C-Br complexes and results in a red uction of electrically active carbon concentration, In this work, we presen t our studies on the incorporation mechanism of C and Br in LT-GaAs and rep ort on the effect of carbon and bromine incorporation on carrier lifetime a nd concentration of arsenic antisite defects. Preliminary results on LT-InP :C characterization are also presented. (C) 2000 American Vacuum Society.