Citation
J. Franklin et al., Gas source molecular beam epitaxial growth of 77 GHz InP Gunn diodes for automotive forward looking radar applications, J VAC SCI B, 18(3), 2000, pp. 1645-1649
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023
→ ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1645 - 1649
Database
ISI
SICI code
1071-1023(200005/06)18:3<1645:GSMBEG>2.0.ZU;2-0
Abstract
Phosphorous based gas source molecular beam epitaxy for the production appl
ication of growing millimeter wave Gunn diode structures on sulfur doped in
dium phosphide substrates for automotive forward looking radar applications
is described. Procedures for obtaining silicon doping control in the 10(15
) range are outlined. Hall mobility and low temperature photoluminescence r
esults comparable to the best results obtained using metal-organic molecula
r beam epitaxy and metal-organic chemical vapor deposition are reported. Pr
ocess control and repeatability are discussed. 77 GHz Gunn diode radio-freq
uency performance results are reported. (C) 2000 American Vacuum Society.