Monolithic integration of resonant interband tunneling diodes and high electron mobility transistors in the InAs/GaSb/AlSb material system

InAs/AlSb high electron mobility transistors (HEMTs) and resonant interband tunneling diodes (RTTDs) with AlSb barriers and GaSb wells were grown in a single heterostructure by molecular beam epitaxy. The resulting HEMTs exhi bit excellent de and microwave performance at low drain voltages, with an i ntrinsic unity-current-gain cutoff frequency of 220 GHz. The RITD performan ce is comparable to RITDs grown directly on InAs substrates, with peak curr ent densities above 10(4) A/cm(2) and peak-to-valley ratios near 11 for 15 Angstrom AlSb barriers. The results represent an important step toward the fabrication of high-speed, low-power logic circuits in this material system .