Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy

Thin film perovskite-type oxide SrTiO3 has been grown epitaxially on Si(001 ) substrate by molecular beam epitaxy. Reflection high energy electron diff raction and x-ray diffraction analysis indicate high quality SrTiO3 heteroe pitaxy on Si substrate with SrTiO3(001)//Si(001) and SrTiO3[010]//Si[110]. The SrTiO3 surface is atomically as smooth as the starting substrate surfac e, with a root mean square roughness of 1.2 Angstrom observed by atomic for ce microscopy. The thickness of the amorphous interfacial layer between SrT iO3 and Si has been engineered to minimize the device short channel effect. An effective oxide thickness <10 Angstrom has been obtained for a 110 Angs trom thick dielectric film. The interface state density between SrTiO3 and Si is S.4x 10(10) cm(-2) eV(-1), and the inversion layer carrier mobilities are 221 and 62 cm(2)V(-1) s(-1) for n- and p-channel metal-oxide-semicondu ctor devices with 1.2 mu m effective channel length, respectively. The gate leakage in these devices is two orders of magnitude smaller than a compara ble SiO2 gate dielectric metal-oxide-semiconductor field effect transistors . (C) 2000 American Vacuum Society.