Thin film perovskite-type oxide SrTiO3 has been grown epitaxially on Si(001
) substrate by molecular beam epitaxy. Reflection high energy electron diff
raction and x-ray diffraction analysis indicate high quality SrTiO3 heteroe
pitaxy on Si substrate with SrTiO3(001)//Si(001) and SrTiO3[010]//Si[110].
The SrTiO3 surface is atomically as smooth as the starting substrate surfac
e, with a root mean square roughness of 1.2 Angstrom observed by atomic for
ce microscopy. The thickness of the amorphous interfacial layer between SrT
iO3 and Si has been engineered to minimize the device short channel effect.
An effective oxide thickness <10 Angstrom has been obtained for a 110 Angs
trom thick dielectric film. The interface state density between SrTiO3 and
Si is S.4x 10(10) cm(-2) eV(-1), and the inversion layer carrier mobilities
are 221 and 62 cm(2)V(-1) s(-1) for n- and p-channel metal-oxide-semicondu
ctor devices with 1.2 mu m effective channel length, respectively. The gate
leakage in these devices is two orders of magnitude smaller than a compara
ble SiO2 gate dielectric metal-oxide-semiconductor field effect transistors
. (C) 2000 American Vacuum Society.