Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices

Citation
Jj. Berry et al., Modulation-doped ZnSe/(Zn,Cd,Mn)Se quantum wells and superlattices, J VAC SCI B, 18(3), 2000, pp. 1692-1696
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
18
Issue
3
Year of publication
2000
Pages
1692 - 1696
Database
ISI
SICI code
1071-1023(200005/06)18:3<1692:MZQWAS>2.0.ZU;2-A
Abstract
The fabrication of "magnetic" two-dimensional electron gases in modulation- doped ZnSe/Zn1-x-yCdxMnySe quantum wells and superlattices is described, wi th a focus on correlating growth conditions with low temperature transport, atomic force microscopy, and photoluminescence. Optimization of the growth parameters results in a two-fold increase in 0.3 K mobility (similar to 23 000 cm(2)/V s) for the host ZnCdSe two-dimensional electron gasses (2DEGs) and a similar relative increase for magnetic 2DEGs. The improved sample gr owth is applied to the fabrication of modulation doped, strained-layer magn etic superlattices containing up to 25 periods of moderately strained quant um wells, without significant reduction in mobility. (C) 2000 American Vacu um Society.