Fabrication of GaAs-based photonic band gap materials

A relatively simple technique for fabrication of GaAs-based quasi-three-dim ensional photonic crystals has been investigated. Selective impurity-induce d layer disordering and wet oxidation techniques are utilized. Fourier-tran sform infrared spectroscopy measurement reveals a stop band between 15 and 20 mu m for a sample with scattering center spacing of 6.3 mu m. Another na rrow transmittance dip in observable in the wavelength range of 1.1-1.58 mu m, with an attenuation of 12 dB at 1.18 mu m. The process is reproducible and lends itself to integration with other optoelectronic and electronic de vices on the same substrate. (C) 2000 American Vacuum Society.