W. Lin et al., Molecular-beam epitaxy growth and nitrogen doping of hexagonal ZnSe and ZnCdSe/ZnSe quantum well structures on hexagonal ZnMgSSe bulk substrates, J VAC SCI B, 18(3), 2000, pp. 1711-1715
Hexagonal ZnMgSSe bulk substrates have been synthesized as attractive alter
natives for the homoepitaxial growth of II-VI device structures. Hexagonal
ZnSe epilayers and ZnCdSe/ZnSe quantum well structures were grown on these
substrates by molecular-beam epitaxy. The cross-sectional transmission elec
tron microscopy image shows that the ZnSe epilayer replicated the hexagonal
structure of the substrate. The 6 K photoluminescence (PL) spectra of the
hexagonal ZnSe layers show strong impurity-bound-exciton emissions at about
2.796 eV. No Y-line (defect-related emission) is observed in the spectra s
uggesting good substrate preparation and growth conditions. The 77 K PL spe
ctra of hexagonal quantum well structures show dominant emission from the Z
nCdSe well layer. Double-crystal x-ray rocking curves indicate that the ZnS
e epitaxial layers and the substrates are near lattice matched. Doping of h
exagonal ZnSe with nitrogen was performed. Photoluminescence spectra sugges
t th;tt these samples exhibit donor-acceptor-pair emission with typical cha
racteristics of heavily doped (compensated) samples. (C) 2000 American Vacu
um Society.