A study of CdTe layers grown by molecular beam epitaxy on InSb(111)A (In te
rminated), and (111)B (Sb terminated) substrates is reported. The growth of
CdTe on InSb(111) substrates was studied in situ by reflection high-energy
electron diffraction, and characterized by atomic force microscopy, Raman
spectroscopy, x-ray diffraction, and photoreflectance. We observed a marked
ly different CdTe growth behavior on InSb(111)A and B surfaces. CdTe grows
nearly two dimensionally on the (111)B surface, whereas on the A surface a
three-dimensional growth is obtained, resulting in polycrystalline regions
with zinc-blende and wurtzite phases. Our results indicate that In-Te compo
unds are formed at the CdTe/InSb interface. The amount of these compounds i
s larger on the (111)A face, thus hindering the smooth CdTe growth on this
face. (C) 2000 American Vacuum Society.