Molecular beam epitaxy of PbSrSe and PbSe/PbSrSe multiple quantum well structures for use in midinfrared light emitting devices

PbSrSe layers and PbSe/PbSrSe multiple quantum well (MQW) structures have b een grown on BaF2 (111) substrates by molecular beam epitaxy. The lattice c onstant of the PbSrSe alloy was determined by x-ray diffraction, and both t he refractive index and absorption edge of the PbSrSe alloy with Sr composi tion up to 0.23 were obtained from Fourier transform infrared transmission spectra at room temperature. MQW structures exhibit strong photoluminescenc e (PL) in the 3-5 mu m wavelength range ar room temperature, The PL intensi ty decreases monotonically with increasing temperature below 230 K. (C) 200 0 American Vacuum Society.