Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO2/Si interfaces

Low-energy electron-excited nanoluminescence spectroscopy reveals depth-res olved optical emission associated with traps near the interface between ult rathin SiO2 deposited by plasma-enhanced chemical vapor deposition on plasm a-oxidized crystalline Si. These near-interface states exhibit a strong dep endence on local chemical bonding changes introduced by thermal/gas prodess ing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bo nd models used to develop advanced dielectric-scmiconductor junctions. (C) 2000 American Vacuum Society.