LiTaO3 films with c-axis preferred orientation prepared on Si(111) substrate by sol-gel method

Authors
Cheng, SD Zhou, Y Kam, CH Han, XQ Que, WX Lam, YL Chan, YC Oh, JT Gan, WS
Citation
Sd. Cheng et al., LiTaO3 films with c-axis preferred orientation prepared on Si(111) substrate by sol-gel method, MATER LETT, 44(3-4), 2000, pp. 125-129
Citations number
36
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
44
Issue
3-4
Year of publication
2000
Pages
125 - 129
Database
ISI
SICI code
0167-577X(200006)44:3-4<125:LFWCPO>2.0.ZU;2-9
Abstract
LiTaO3 films with c-axis preferred orientation have been prepared on Si(lll ) substrates using sol-gel spin-coating and rapid thermal annealing. Hydrog en-terminated silicon surface, preheating temperature, and unidirectional h eat flow during the heat treatment are essential factors for the c-axis tex ture. The texture is useful in pyroelectric, metal-ferroelectric-semiconduc tor (MFS) nonvolatile memory, and integrated optics applications. (C) 2000 Elsevier Science B.V. All rights reserved.