We report the preparation and characterization of ferroelectric SrBi2Ta2O9
(SBT) thin films derived from metalorganic decomposition (MOD) along with t
he spin-on technique. Film composition was analyzed by inductively coupled
plasma (ICP) analysis and Rutherfold backscattering (RBS) spectroscopy. X-r
ay diffraction, scanning electron microscopy (SEM) and electrical measureme
nts showed well-crystallized SET thin films with uniform surface and excell
ent ferroelectric properties after annealing in O-2 above 750 degrees C. Th
e remanent polarization (P-r) at 3 V stimulus voltage was 6-7 and 9-10 mu C
/cm(2) for 330 nm-thick films annealed at 750 degrees C and 800 degrees C.
The coercive field was only around 15 kV/cm. Good resistance against fatigu
e and excellent retention properties were observed up to 10(11) bipolar swi
tching cycles and 7 x 10(5) s, respectively. (C) 2000 Elsevier Science B.V.
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