Preparation and structure of unhydrogenated microcrystalline silicon thin films by sputtering

Authors
Ehara, T Nagasawa, T
Citation
T. Ehara et T. Nagasawa, Preparation and structure of unhydrogenated microcrystalline silicon thin films by sputtering, MATER LETT, 44(3-4), 2000, pp. 223-227
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
44
Issue
3-4
Year of publication
2000
Pages
223 - 227
Database
ISI
SICI code
0167-577X(200006)44:3-4<223:PASOUM>2.0.ZU;2-R
Abstract
Unhydrogenated microcrystalline silicon (mu c-Si) thin films have been prep ared by sputtering. The formation of the microcrystalline films was observe d at the Ar sputtering pressure of 26.6 Pa by Raman spectra and X-ray diffr action. In addition, the increase of the sputtering pressure induces an inc rease of the crystallite size and a decrease of the growth rate. (C) 2000 E lsevier Science B.V. All rights reserved.