Dielectric relaxation in pure and irradiated TGSP crystals

Citation
G. Arunmozhi et al., Dielectric relaxation in pure and irradiated TGSP crystals, MATER LETT, 44(3-4), 2000, pp. 237-241
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
44
Issue
3-4
Year of publication
2000
Pages
237 - 241
Database
ISI
SICI code
0167-577X(200006)44:3-4<237:DRIPAI>2.0.ZU;2-K
Abstract
Low frequency dielectric measurements in triglycine sulpho-phosphate (TGSP) and gamma-irradiated TGSP crystals were carried out around the ferroelectr ic to paraelectric phase transition. The dispersion found in the ferroelect ric phase cannot be explained only by a Debye equation with a single relaxa tion time. The ratio of the Curie constants in the para- and ferroelectric phase (C-p/C-f) for the irradiated TGSP samples show that the crystal is pa rtially clamped. The deviations from the typical single relaxation behaviou r are more pronounced in irradiated samples clearly indicating the contribu tion of defects in addition to the impurities to the dynamics of the system . (C) 2000 Elsevier Science B.V. AU rights reserved.