Low temperature chemical vapor deposition of 3C-SiC on 6H-SiC - high resolution X-ray diffractometry and synchrotron X-ray topography study

Highly perfect 3C-SiC thin films, deposited on GH-SIC by the chemical vapor deposition at low temperature with various Cl/Si, H/Si and C/Si ratios, we re characterized by X-ray high resolution triple crystal diffractometry, sy nchrotron white beam X-ray topography (SWBXT) and synchrotron grazing incid ence topography (SGIT) methods. The films were epitaxial with a low defect density (mostly in the range of 10(7) cm(-2)). The best films were produced with optimum C/Si ratio in the gas phase while the poorest quality films w ere produced at lower H-2/Si ratio. Synchrotron topography revealed defects like cellular dislocation structure, super screw dislocations, pens, low a ngle grain boundaries and double positioning boundaries. (C) 2000 Elsevier Science S.A. All rights reserved.