Characterization of high-density current stressed IGBTs and simulation with an adapted SPICE sub-circuit

Insulated Gate Bipolar Transistors are devices integrating a MOSFET and a b ipolar transistor in a Darlington configuration. These devices have been st udied before and after conduction stress. During high temperature operation s (200 degrees C) hot carriers call induce degradation in gate oxide, at si licon-oxide interface and into the base-emitter junction. The used IGBT SPI CE sub-circuit can describe electrical aging in dynamic and static operatio n. The knowledge of which parameters are influenced during specific functio nal stress permits us to compensate for these changes or improve the implem entation of the component in a circuit, as well as its use in field conditi ons. (C) 2000 Elsevier Science Ltd. All rights reserved.