A new method of studying on the dynamic parameters of bulk traps in thin SiO2 layer of MOS structures

Based on the proportional difference spectral function theorem, a new metho d to measure dynamic parameters of bulk traps in thin SiO2 layer is present ed. This extracts the dynamic parameters by using the time characteristic o f high frequency inversion capacitance in metal-oxide-semiconductor (MOS) s tructures. From the peak position and the peak value of the spectrum, we ca ll easily obtain the generation/capture cross-section and the effective sat uration value of bulk trap density. This new method has the benefits of sim plicity, convenience and low noise. (C) 2000 Elsevier Science Ltd. All righ ts reserved.