A GaAs monolithic voltage-controlled attenuator and a vector attenuator, wh
ich apply a ring structure, are newly developed. Their features are a very
small size, which permits dense integration, and a large-scale variable ran
ge. Because of using lumped constant topologies and adopted a MESFET instea
d of a p-i-n diode as variable resistor, the size of the circuit is reduced
greatly. The chip sizes of the voltage-controlled biphase and vector atten
uator are 4.5 mm X 1.5 mm and 7 mm X 1.5 mm, respectively. (C) John Wiley &
Sons, Inc.