Simulation of defects and diffusion phenomena in silicon

Citation
Me. Law et al., Simulation of defects and diffusion phenomena in silicon, MRS BULL, 25(6), 2000, pp. 45-50
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MRS BULLETIN
ISSN journal
08837694 → ACNP
Volume
25
Issue
6
Year of publication
2000
Pages
45 - 50
Database
ISI
SICI code
0883-7694(200006)25:6<45:SODADP>2.0.ZU;2-K