Determination of optical parameters of GeTe semiconductor films after thermal treatment

Citation
J. Li et al., Determination of optical parameters of GeTe semiconductor films after thermal treatment, OPT MATER, 14(4), 2000, pp. 337-343
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
OPTICAL MATERIALS
ISSN journal
09253467 → ACNP
Volume
14
Issue
4
Year of publication
2000
Pages
337 - 343
Database
ISI
SICI code
0925-3467(200008)14:4<337:DOOPOG>2.0.ZU;2-4
Abstract
The optical parameters of GeTe semiconductor films after various thermal tr eatments have been measured using a novel method. A comparative study using a spectrum ellipsometer is presented. The optical parameters of the films were extracted precisely by data analysis and corrections have been made to previous calculations. Calculations based on the spectral ellipsometry mea surements are presented finally, and the complex refractive index curves of the samples in the spectral range from 250 to 830 nm have been obtained. ( C) 2000 Elsevier Science B.V. All rights reserved.