Time-dependent scattering of a standing surface plasmon by rapid ionization in a semiconductor

Scattering of a standing surface plasmon by rapid ionization in a semicondu ctor is investigated. We show that, for a standing plasmon, in contrast wit h a traveling plasmon, the scattering depends on the plasmon phase at the m oment of ionization. By changing the moment of ionization, we can control t he energy that is transferred into newly excited modes, which include a fre quency-upshifted standing surface plasmon, transient outgoing radiation, an d free-streaming currents with a static magnetic field in the semiconductor . The phenomena that are described open new possibilities for probing the d ynamics of surface excitations in semiconductors on an ultrashort time scal e. (C) 2000 Optical Society of America. OCIS cedes: 240.6680, 260.2110, 320 .7110, 350.5400.