Direct observation of electromigration of Si magic clusters on Si(111) surfaces

Citation
Ms. Ho et al., Direct observation of electromigration of Si magic clusters on Si(111) surfaces, PHYS REV L, 84(25), 2000, pp. 5792-5795
Citations number
21
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
84
Issue
25
Year of publication
2000
Pages
5792 - 5795
Database
ISI
SICI code
0031-9007(20000619)84:25<5792:DOOEOS>2.0.ZU;2-R
Abstract
Using scanning tunneling microscopy, we have observed electromigration of S i on Si(lll)-(7 X 7) surfaces and have identified the diffusion species to be Si magic clusters. Effects of the directed motion along the direction of the heating current in electromigration and those in thermal migration are determined separately and quantitatively. We also observe the preferential filling of two-dimensional (2D) Si craters and the preferential detachment of Si magic clusters from the edges of 2D Si islands near the cathode side . The driving force for this anisotropic behavior is much stronger than pre viously recognized.