HOLE MOBILITIES AND THE EFFECTIVE HALL FACTOR IN P-TYPE GAAS

We prove the effective Hall factor in p-GaAs to be larger than values discussed in the literature up to now. The scattering rates for the re levant scattering mechanisms in p-GaAs have been recalculated after cr itical testing the existing models. These calculations allow to deduce theoretical drift and theoretical Hall mobilities as functions of tem perature which can be compared with measured data. Theoretical Hall fa ctors in the heavy and light hole bands and an effective Hall factor r esult. The calculated room temperature values of the drift mobility an d of the effective Hall factor are 118 cm(2)/V s and 3.6, respectively . The fitted acoustic deformation potential E-1=7.9 eV and the fitted optical coupling constant D-K=1.24X10(11) eV/m are close to values pub lished before. It is shown that the measured strong dependence of the Hall mobility on the Hall concentration is not mainly caused by scatte ring by ionized impurities but by the dependence of the effective Hall factor on the hole concentration. (C) 1997 American Institute of Phys ics.