PHOTOEMISSION-STUDY OF THE FORMATION OF INTIMATE IN-INGAAS(100) CONTACTS AT ROOM AND CRYOGENIC TEMPERATURES

Previous current-voltage studies of In contacts deposited on atomicall y clean (intimate) In53Ga47As(100) have indicated the potential to ''s elect'' barrier heights in this materials system by cryogenic processi ng. Soft x-ray photoemission spectroscopy was used to determine the el ectronic and chemical nature of these interfaces, as a function of for mation temperature. Metallization at room temperature results in a pre dominantly three-dimensional mode of growth, accompanied by the outdif fusion of As. Low temperature metallization appears to reduce clusteri ng and inhibit As outdiffusion. It is proposed that the distribution o f surface states and the fermi level pinning position are altered by t he changes that occur in the geometry and bonding of the interface at low temperature. (C) 1997 American Institute of Physics.