Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations
Gb. Galiev et al., Investigation of distribution and redistribution of silicon in thin doped gallium-arsenide layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations, SEMICONDUCT, 34(7), 2000, pp. 741-745
The distribution of silicon in GaAs was investigated by secondary-ion mass
spectrometry (SIMS) before and after the thermal annealing of thin doped Ga
As layers grown by molecular beam epitaxy on substrates with (100), (111)Ga
, and (111)As orientations. The surface relief pattern of the grown epitaxi
al films was studied by atomic-force microscopy both inside and outside the
ion-etching crater developed during the SIMS analysis. Features of the sur
face relief inside the crater are revealed for various orientations. Change
s observed in the shape of doping profiles are explained both by the featur
es of the development of the surface relief during the ion etching accompan
ying the SIMS analysis and by an accelerated diffusion of Si over the growt
h defects. (C) 2000 MAIK "Nauka / Interperiodica".