Far infrared stimulated and spontaneous radiation in uniaxially deformed zero-gap Hg1-xCdxTe

Citation
Ef. Venger et al., Far infrared stimulated and spontaneous radiation in uniaxially deformed zero-gap Hg1-xCdxTe, SEMICONDUCT, 34(7), 2000, pp. 763-767
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
7
Year of publication
2000
Pages
763 - 767
Database
ISI
SICI code
1063-7826(2000)34:7<763:FISASR>2.0.ZU;2-I
Abstract
Stimulated radiation in the range of 80-100 mu m was observed in uniaxially stressed zero-gap Hg1 - xCdxTe (x = 0.10-0.14) under conditions of impact ionization by an electric field. The abrupt increase in emission occurs und er the threshold values of elastic strain and electric-field strength and i s followed by an abrupt increase in the current in the sample. The field an d deformation dependences of spontaneous radiation are also determined. The mechanism of the effect observed is suggested taking into account the tran sformation of energy bands and impurity acceptor levels by the uniaxial ela stic stress. (C) 2000 MAIK "Nauka / Interperiodica".