The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO2-n-Si tunnel structures

Authors
Vexler, MI Grekhov, IV Shulekin, AF
Citation
Mi. Vexler et al., The role of impact ionization in the formation of reverse current-voltage characteristics of Al-SiO2-n-Si tunnel structures, SEMICONDUCT, 34(7), 2000, pp. 775-780
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
7
Year of publication
2000
Pages
775 - 780
Database
ISI
SICI code
1063-7826(2000)34:7<775:TROIII>2.0.ZU;2-Q
Abstract
Physical processes responsible for the reverse current-voltage (I-V) charac teristics of Al-SiO2-n-Si structures with 1.2-3.2-nm-thick SiO2 and a silic on doping level of 10(14)-10(18) cm(-3) were analyzed. A new model describi ng the evolution of the hot-electron energy in structures of this kind is s uggested. The roles played by Auger ionization and impact ionization are di fferentiated. The turn-on voltages of a tunnel MOS structure are studied bo th theoretically and experimentally. The turn-on voltage is shown to decrea se with increasing oxide layer thickness. (C) 2000 MAIK "Nauka / Interperio dica".