Photosensitivity of structures based on ZnSe single crystals

Citation
Ga. Il'Chuk et al., Photosensitivity of structures based on ZnSe single crystals, SEMICONDUCT, 34(7), 2000, pp. 781-785
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
7
Year of publication
2000
Pages
781 - 785
Database
ISI
SICI code
1063-7826(2000)34:7<781:POSBOZ>2.0.ZU;2-0
Abstract
Heat treatment in vacuum and air was used to produce photosensitive structu res based on ZnSe single crystals. Spectral dependences of relative quantum efficiency of photoconversion in these structures under exposure to natura l and linearly polarized light were studied. The polarization photosensitiv ity of ZnSe-based structures was detected and studied in relation to their manufacturing conditions and photodetection configuration. Photopleochroism in these structures was shown to arise at oblique incidence of polarized l ight. The heat treatment of ZnSe in atmospheric air was demonstrated to red uce photopleochroism, which is related to interference phenomena in the for med layers. It was concluded that ZnSe can be employed in polarimetric shor t-wavelength photodetectors. This study represents a new approach to diagno stics of interaction processes at the ZnSe surface. (C) 2000 MAIK "Nauka / Interperiodica".