Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes

Authors
Vasil'ev, VV Esaev, DG Kravchenko, AF Osadchii, VM Suslyakov, AO
Citation
Vv. Vasil'Ev et al., Study of the effect of graded gap epilayers on the performance of CdxHg1-xTe photodiodes, SEMICONDUCT, 34(7), 2000, pp. 844-847
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
7
Year of publication
2000
Pages
844 - 847
Database
ISI
SICI code
1063-7826(2000)34:7<844:SOTEOG>2.0.ZU;2-F
Abstract
The characteristics of the photodiodes based on CdxHg1 - xTe solid solution s with graded gap layers were calculated in the context of a one-dimensiona l diffusion-drift model. The parameters of the photodiodes were shown to be improved when the p-n junction was located in the near-surface graded gap region rather than in the central homogeneous section of the structure. The photodiodes with the n-type layer adjacent to the substrate were found to offer an advantage over the diodes with the p-layer close to the substrate in the case of illumination from the substrate side. (C) 2000 MAIK "Nauka / Interperiodica".