M. Aidaraliev et al., InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.0-3.3 mu m) for diode laser spectroscopy, SEMICONDUCT, 34(7), 2000, pp. 848-852
Data on threshold currents, the differential quantum efficiency, the emissi
on spectrum, current tuning, and radiation power of mesastripe InGaAsSb(Gd)
/InAsSbP double heterostructure lasers with lambda = 3.0-3.3 mu m and a cav
ity length of 70-150 mu m in a temperature range of 50-107 K are reported.
In the experiments, the threshold currents I-th < 10 mA, a total output pow
er of 0.5 mW/facet, and a single-mode power of 0.43 mW at 77 K in the cw re
gime were obtained. Lasers operated in the single-mode regime at currents I
less than or equal to 6I(th), the spectral purity was as high as 650 : 1,
the tuning rate was 210 cm(-1)/A, and the tuning range was 10 cm(-1) wide.
An example of methane detection at 3028.75 cm(-1) is presented. (C) 2000 MA
IK "Nauka / Interperiodica".