InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.0-3.3 mu m) for diode laser spectroscopy

Citation
M. Aidaraliev et al., InGaAsSb(Gd)/InAsSbP double heterostructure lasers (lambda=3.0-3.3 mu m) for diode laser spectroscopy, SEMICONDUCT, 34(7), 2000, pp. 848-852
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
7
Year of publication
2000
Pages
848 - 852
Database
ISI
SICI code
1063-7826(2000)34:7<848:IDHL(M>2.0.ZU;2-F
Abstract
Data on threshold currents, the differential quantum efficiency, the emissi on spectrum, current tuning, and radiation power of mesastripe InGaAsSb(Gd) /InAsSbP double heterostructure lasers with lambda = 3.0-3.3 mu m and a cav ity length of 70-150 mu m in a temperature range of 50-107 K are reported. In the experiments, the threshold currents I-th < 10 mA, a total output pow er of 0.5 mW/facet, and a single-mode power of 0.43 mW at 77 K in the cw re gime were obtained. Lasers operated in the single-mode regime at currents I less than or equal to 6I(th), the spectral purity was as high as 650 : 1, the tuning rate was 210 cm(-1)/A, and the tuning range was 10 cm(-1) wide. An example of methane detection at 3028.75 cm(-1) is presented. (C) 2000 MA IK "Nauka / Interperiodica".