Properties of wide-mesastripe InGaAsP/InP lasers

Wide-mesastripe InGaAsP/InP heterostructure lasers emitting at 1.3-1.5 mu m were grown by metal-organic chemical vapor deposition (MOCVD). Radiation-p ower-current and spectral characteristics of the lasers have been studied i n pulsed and continuous wave (cw) operation in the temperature range of 10- 60 degrees C. The temperature of the active region of the diode laser is hi gher by 30-60 degrees C than that of the copper heatsink upon saturation of the cw output power. The temperature dependence of the differential quantu m efficiency strongly affects the cw output power. Output powers of 3 and 2 .6 W are achieved in mesastripe lasers in cw operation, and 9 and 6.5 W in pulsed operation, at wavelengths of 1.3 and 1.5 mu m, respectively. (C) 200 0 MAIK "Nauka / Interperiodica".