NEW-TYPE OF ACTIVE DEVICE BASED ON GALVANOMAGNETIC EFFECT

A new type of active device composed of metals is fabricated based on the galvanomagnetic electromotive force effect, which is at the origin of the magnetoresistance effect and of the so-called planar Hall effe ct. A power gain (the ratio of the signal output to a signal input) of 2.5 is experimentally obtained for this active device. This experimen tal result shows the feasibility of active devices based on quite a di fferent principle from existing ones. (C) 1997 American Institute of P hysics.