Degradation of the diode ideality factor of silicon n-p junctions

Authors
El-Tahchi, M Khoury, A De Labardonnie, M Mialhe, P Pelanchon, F
Citation
M. El-tahchi et al., Degradation of the diode ideality factor of silicon n-p junctions, SOL EN MAT, 62(4), 2000, pp. 393-398
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
SOLAR ENERGY MATERIALS AND SOLAR CELLS
ISSN journal
09270248 → ACNP
Volume
62
Issue
4
Year of publication
2000
Pages
393 - 398
Database
ISI
SICI code
0927-0248(20000601)62:4<393:DOTDIF>2.0.ZU;2-U
Abstract
An investigation of the effects of bulk and interface degradation processes on the junction ideality factor is presented. The ideality factor is extra cted from a description of the simulated current-voltage characteristics of the junction, using a double exponential model. The junction ideality fact or appears as a sensitive parameter appropriate to characterize the effect of recombination losses and to quantify the magnitude of junction devices d egradation. (C) 2000 Elsevier Science B.V. All rights reserved.