Thermal conductivity of isotopically enriched silicon

Citation
T. Ruf et al., Thermal conductivity of isotopically enriched silicon, SOL ST COMM, 115(5), 2000, pp. 243-247
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SOLID STATE COMMUNICATIONS
ISSN journal
00381098 → ACNP
Volume
115
Issue
5
Year of publication
2000
Pages
243 - 247
Database
ISI
SICI code
0038-1098(2000)115:5<243:TCOIES>2.0.ZU;2-Y
Abstract
By means of a steady-state heat-flow technique, we have measured the therma l conductivity in a bulk crystal of highly enriched (99.8588%) Si-28 for te mperatures between 2 and 310 K. Maximum values of about 30 000 W m(-1) K-1 for K are found around 20 K. This is six times larger than in natural silic on and even exceeds the maximum in diamond with natural isotope abundance. At room temperature, we obtain a thermal conductivity enhancement of almost 60% compared to natural Si. Our results agree well with theoretical predic tions. (C) 2000 Elsevier Science Ltd. All rights reserved.