H2O was adsorbed onto n-InP(110) cleavage planes at 100 K and its interacti
on with the surface was investigated by SXPS and LEED. H2O is dissociativel
y adsorbed at low coverages forming In-OH and P-H bonds, which lead to pinn
ing acceptor states close to midgap. At higher coverages H2O is molecularly
adsorbed and flat band potential is retained. During annealing first the m
olecularly adsorbed H2O desorbs and afterwards the surface rearranges to fo
rm an In suboxide. The oxidized surface shows Fermi level pinning at E-F-E-
VB = 0.9 eV. (C) 2000 Elsevier Science B.V. All rights reserved.