Growth of thin, crystalline oxide, nitride and oxynitride films on metal and metal alloy surfaces

This paper reviews the current knowledge of the properties of ultrathin, we ll-ordered oxide, nitride and oxynitride films grown on metal and metal all oy surfaces. Different modes of preparation are discussed and the vibration al and structural properties are summarized. The focus will be put onto Al- oxides grown on surfaces of the intermetallic alloys NiAl, Ni3Al and FeAl. The properties of Ga2O3 grown on surfaces of the intermetallic alloy CoGa a re also described. In these cases Al- and Ga-atoms, respectively, segregate from the substrate and react with adsorbed oxygen. The grown Al- and Ga-ox ide films, respectively, order at elevated temperatures. Systems are also d iscussed where ill-oxide is grown by oxidation of Al-atoms which are evapor ated on surfaces of the transition metals Re and Ru. The growth of transiti on metal oxides CoO (1 1 1)/Co (0 0 0 1), CoO (1 0 0)/Co (1 1 2 0), NiO (1 0 0)/Ni (1 0 0), NiO/Ni (1 1 1) and Cr2O3/Cr (1 1 0) are also presented. Th in films of Al- and Ga-nitride, respectively, can be grown on the base of t he intermetallic alloy NiAl and CoGa by low-temperature adsorption of ammon ia. These nitride films order at elevated temperatures. Al- and Ga-oxynitri de, respectively, can be grown on surfaces of NiAl and CoGa substrates by a dsorption on nitric oxide. An ordering of these ultrathin oxynitride layers is observed at elevated temperatures. (C) 2000 Elsevier Science B.V. All r ights reserved.