Preparation of Gd2CuO4 film with Perovskite structure

Gd2CuO4 film was successfully deposited on Si wafer using an amorphous hete ronuclear complex as precursor. XPS indicated the film was composed of Gd2C uO4 complicated oxide, and while XRD showed that the film had perovskite st ructure. AES depth profile revealed the film was homogenous with depth. The thickness of film increased with the concentration of precursor polynomial ly and the relationship could be described as follows: d = 2.96 - 0.446(ome ga/%) + 0.141(omega/%)(2). The mass fraction of precursor in solution had s ignificant influence on the texture of film. when the mass fraction of prec ursor in solution was lower than 22%, no micro - crackle was observed. The addition of PEG had practically no effects on the thickness of film, but it could improve the texture of the film.