Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence
Ys. Huang et al., Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence, APPL PHYS L, 77(1), 2000, pp. 37-39
We have investigated an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting
laser using surface photovoltage spectroscopy (SPS) in the temperature ran
ge of 15 K < T < 400 K. For comparison purposes, we have also (a) measured
temperature-dependent photoreflectance (PR) and normal-incidence reflectivi
ty (NIR); and (b) calculated the number of photoexcited carriers (PEC), whi
ch is related to the SPS signal. The SPS spectra exhibit both the fundament
al conduction to heavy-hole (1C-1H) excitonic transition and cavity mode pl
us a rich interference pattern related to the properties of the mirror stac
k. The PR data show only the 1C-1H excitonic transition (plus Franz-Keldysh
oscillations) while the cavity mode is detected by NIR. The temperature va
riation of 1C-1H/cavity mode is the same for SPS and PR/SPS and NIR. The SP
S interference pattern from the DBRs is in good agreement with the PEC calc
ulation. This experiment demonstrates the considerable potential of SPS for
the characterization of these devices. (C) 2000 American Institute of Phys
ics. [S0003-6951(00)01521-7].