On the possibility of diamond wafer bonding in ultrahigh vacuum

Authors
Conrad, D Scheerschmidt, K Gosele, U
Citation
D. Conrad et al., On the possibility of diamond wafer bonding in ultrahigh vacuum, APPL PHYS L, 77(1), 2000, pp. 49-51
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
1
Year of publication
2000
Pages
49 - 51
Database
ISI
SICI code
0003-6951(20000703)77:1<49:OTPODW>2.0.ZU;2-4
Abstract
The possibility of bonding clean diamond surfaces covalently in ultrahigh v acuum is investigated by molecular dynamics simulations based on a tight bi nding model. Our simulations predict that strong covalent bonding is possib le for C(001)-2x1 surfaces. C(111)-2x1 surfaces will bond very weakly and d ebond already at moderate temperatures. (C) 2000 American Institute of Phys ics. [S0003-6951(00)03027-8].