Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces

Authors
Semmler, U Ebert, P Urban, K
Citation
U. Semmler et al., Effect of charge carriers on the barrier height for vacancy formation on InP(110) surfaces, APPL PHYS L, 77(1), 2000, pp. 61-63
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
1
Year of publication
2000
Pages
61 - 63
Database
ISI
SICI code
0003-6951(20000703)77:1<61:EOCCOT>2.0.ZU;2-4
Abstract
We determine the energy barrier height for the formation of positively char ged phosphorus vacancies in InP(110) surfaces using the rate of formation o f vacancies measured directly from scanning tunneling microscope images. We found a barrier height in the range of 1.15-1.21 eV. The barrier height de creases with increasing carrier concentration. These results are explained by a charge separation during the vacancy formation process. (C) 2000 Ameri can Institute of Physics. [S0003-6951(00)02027-1].