Energy dependence of transient enhanced diffusion and defect kinetics

Boron, a p-type dopant, experiences transient enhanced diffusion (TED) via interstitials. The boron TED and {311} dissolution rates are explored as a function of implant energy dependence. Silicon implants of 10(14)/cm(2) at various energies were used to damage the surface of a wafer with an epitaxi ally grown boron marker layer. Samples were annealed at 750 degrees C for 1 5-135 min to observe the diffusion exhibited by the marker layer and to cor relate this with the dissolution of {311} type defects. The diffusion enhan cement depends strongly on implant energy but the {311} dissolution rate is weakly dependent. (C) 2000 American Institute of Physics. [S0003-6951(00)0 4727-6].