Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films

Authors
Citation
Bt. Lee et Cs. Hwang, Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films, APPL PHYS L, 77(1), 2000, pp. 124-126
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
1
Year of publication
2000
Pages
124 - 126
Database
ISI
SICI code
0003-6951(20000703)77:1<124:IOIILL>2.0.ZU;2-S
Abstract
The influences of low-dielectric interfacial layers on the dielectric prope rties of Pt/(Ba,Sr)TiO3/Pt capacitors were investigated before and after po stannealing. The interfacial layer is believed to be the intrinsic dead lay er (low-dielectric layer) due to the termination of chemical bonds of the ( Ba,Sr)TiO3 (BST) material at the interfaces. The dielectric constant of the capacitor decreases with decreasing BST film thickness owing to the low di electric constant of the dead layer. The dead-layer capacitance varies with processes such as film deposition temperature, and postannealing. Higher d eposition temperatures result in a larger dead-layer capacitance and a high er bulk dielectric constant. Although annealing under a N-2 atmosphere is l ess effective in reducing the dead-layer effect than under an O-2 atmospher e, it is more effective in increasing the bulk dielectric constant. Therefo re, a N-2, rather than an O-2 atmosphere, results in a larger increase in t he overall dielectric constant. (C) 2000 American Institute of Physics. [S0 003-6951(00)00427-7].