Bt. Lee et Cs. Hwang, Influences of interfacial intrinsic low-dielectric layers on the dielectric properties of sputtered (Ba,Sr)TiO3 thin films, APPL PHYS L, 77(1), 2000, pp. 124-126
The influences of low-dielectric interfacial layers on the dielectric prope
rties of Pt/(Ba,Sr)TiO3/Pt capacitors were investigated before and after po
stannealing. The interfacial layer is believed to be the intrinsic dead lay
er (low-dielectric layer) due to the termination of chemical bonds of the (
Ba,Sr)TiO3 (BST) material at the interfaces. The dielectric constant of the
capacitor decreases with decreasing BST film thickness owing to the low di
electric constant of the dead layer. The dead-layer capacitance varies with
processes such as film deposition temperature, and postannealing. Higher d
eposition temperatures result in a larger dead-layer capacitance and a high
er bulk dielectric constant. Although annealing under a N-2 atmosphere is l
ess effective in reducing the dead-layer effect than under an O-2 atmospher
e, it is more effective in increasing the bulk dielectric constant. Therefo
re, a N-2, rather than an O-2 atmosphere, results in a larger increase in t
he overall dielectric constant. (C) 2000 American Institute of Physics. [S0
003-6951(00)00427-7].