Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)]

Authors
Venezia, VC Brown, RA Kalyanaraman, R Haynes, TE Holland, OW Williams, JS
Citation
Vc. Venezia et al., Comment on "Interstitial-type defects away from the projected ion range inhigh energy ion implanted and annealed silicon" [Appl. Phys. Lett. 75, 1279 (1999)], APPL PHYS L, 77(1), 2000, pp. 151-152
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
1
Year of publication
2000
Pages
151 - 152
Database
ISI
SICI code
0003-6951(20000703)77:1<151:CO"DAF>2.0.ZU;2-G